5? features isolation test voltage: 2500 vac rms ttl compatible high bit rates: 1 mbit/s high common-mode interference immunity bandwidth 2 mhz open-collector output external base wiring possible field-effect stable by trios* underwriters lab file #e52744 description the 6N135 and 6n136 are optocouplers with a gaaias infrared emitting diode, optically coupled with an integrated photodetector which consists of a photodiode and a high-speed transistor in a dip- 8 plastic package. signals can be transmitted between two electri- cally separated circuits up to frequencies of 2 mhz. the potential difference between the circuits to be coupled is not allowed to exceed the maxi- mum permissible reference voltages. maximum ratings emitter reverse voltage .................................................5 v forward current ............................................25 ma peak forward current (t =1 ms, duty cycle 50%) ............................50 ma maximum surge forward current (t 1 m s, 300 pulses/s).......................................1 a thermal resistance................................... 700 k/w total power dissipation (t a 70 c) ...............45 mw detector supply voltage ..................................... ?.5 to 15 v output voltage .................................... ?.5 to 15 v emitter-base voltage ......................................... 5 v output current.................................................8 ma maximum output current ..............................16 ma base current .................................................. 5 ma thermal resistance................................... 300 k/w total power dissipation (t a 70 c) .............100 mw package isolation test voltage (between emitter and detector climate per din 40046, part 2, nov. 74 (t=1min.) ............... 2500 vac rms pollution degree (din vde 0109) ......................... 2 creepage ...........................................................3 7 mm clearance ...........................................................3 7 mm comparative tracking index per din iec112/vde 0303 part 1, group iiia per din vde 6110 ........................ 175 isolation resistance v io =500 v, t a = 25 c ............................... 3 10 12 w v io =500 v, t a = 100 c ............................. 3 10 11 w storage temperature range ....... ?5 c to +125 c ambient temperature range ...... ?5 c to +100 c soldering temperature (max. 10 sec., dip soldering 3 0.5 mm from case bottom).............................................. 260 c *trios tr ansparent io n s hield characteristics (t a =0 to 70 c unless otherwise speci?d, t a =25 c typ.) emitter symbol unit condition forward voltage v f 1.6 ( 1.9) v i f =16 ma breakdown voltage v br 3 5vi r =10 m a reverse current i r 0.5 ( 10) m av r =5 v capacitance c o 125 pf v r =0 v, f=1 mhz temperature coeffi- cient, forward voltage d v f / d t a -1.7 mv/ ci f =16 ma detector supply current logic low i ccl 150 m a i f =16 ma, v o open, v cc =15 v supply current logic high i cch 0.01 ( 1) m a i f =0 ma, v o open, v cc =15 v output voltage, output low 6N135 6n136 v ol v ol 0.1 ( 0.4) 0.1 ( 0.4) v v i f =16 ma, v cc =4.5 v i o =1.1 ma i o =2.4 ma output current, output high i ch 3 ( 500) na i f =0 ma, v o =v cc =5.5 v output current, output high i ch 0.01 ( 1) m a i f =0 ma v o =v cc =15 v current gain h fe 150 v o =5 v, i o =3 ma package coupling capacitance input-output c io 0.6 pf f=1 mhz current transfer ratio 6N135 6n136 ctr ctr 16 ( 3 7) 35 ( 3 19) % % i f =16 ma, v o =0.4 v, v cc =4.5 v, t a =25 c 6N135 6n136 ctr ctr 3 5 3 15 %i f =16 ma, v o =0.5 v, v cc =4.5 v dimensions in inches (mm) 1 2 3 4 8 7 6 5 cathode (v cc ) nc anode cathode nc base (v b ) collector (v o ) emitter (gnd) . 268 (6.81) . 255 (6.48) 3 4 6 5 .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) 4 typ. .100 (2.54) typ. 10 typ. 3 ? .305 typ. (7.75) typ. .022 (.56) .018 (.46) .012 (.30) .008 (.20) .135 (3.43 ) .115 (2.92 ) 1 2 8 7 pin one i.d. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 6N135 6n136 high-speed 2.5 kv trios optocoupler this document was created with framemaker 4.0.4
5? 6N135/136 figure 1. switching times figure 2. common-mode interference immunity 1 2 3 4 8 7 6 5 i f v o r l 5 v pulse generator z o =50 w t r , t f =5 ns duty cycle 10% t 100 s c l 15 p f i f monitor 100 w v ol t t 5 v 1.5 v v o i f t plh t phl 1 2 3 4 8 7 6 5 v cm v o v o 10 v 5 v 0 v v ol 90% 10% 90% 10% t r t f t t t a: i f =0 ma b: i f =16 ma b v ff i f +v cm v o r l 5 v a pulse generator z o =50 w t r , t f =8 ns delay time (i f =16 ma, v cc =5 v, t a =25 c) common mode interference immunity (v cm =10 v p-p , v cc =5 v, t a =25 c) figure 3. output characteristics-6N135 output current versus output voltage (t a =25 c, v cc =5 v) figure 4. output characteristics-6n136 output current versus output voltage (t a =25 c, v cc =5 v) high - low 6N135 (r l =4.1 k w ) 6n136 (r l =1.9 k w) t phl t phl 0.3 ( 1.5) 0.2 ( 0.8) m s m s low - high 6N135 (r l =4.1 k w ) 6n136 (r l =1.9 k w ) t plh t plh 0.3 ( 1.5) 0.2 ( 0.8) m s m s high (i f =0 ma) 6N135 (r l =4.1 k w ) 6n136 (r l =1.9 k w ) cm h cm h 1000 1000 v/ m s v/ m s low (i f =16 ma) 6N135 (r l =4.1 k w ) 6n136 (r l =1.9 k w ) cm l cm l 1000 1000 v/ m s v/ m s
5? 6N135/136 figure 11. delay times versus ambi- ent temperature (i f =16 ma, v cc =5 v, 6N135: r l =4.1 k w , 6n136: r l =1.9 k w ) figure 12. current transfer ratio (nor- malized) versus forward current (i f =16 ma, v o =0.4 v, v cc =5 v, t a =25 c) figure 8. small signal transfer ratio ver- sus forward current (v cc =5 v, t a =25 c) figure 9. current transfer ratio (normal- ized) versus ambient temperature (nor- malized to i f =16 ma, v o =0.4 v, v cc =5 v, t a =25 c) figure 10. output current (high)versus ambient temperature (v o =v cc =5 v, i f =0) figure 5. permissible forward current of emitting diode versus ambient temperature figure 6. permissible total power dissi- pation versus ambient temperature figure 7. forward current of emitting diodeversus forward voltage (t a =25 c)
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